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| Composite Transistors XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1216 x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 300 150 -55 to +150 Unit V V mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 9N Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance *1 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = -2mA, f = 200MHz -30% 150 4.7 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.01 460 typ max Unit V V A A mA Ratio between 2 elements +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 500 XN1216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE 160 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V Ta=25C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C Forward current transfer ratio hFE 350 Ta=75C 300 250 -25C 200 150 100 50 0 25C Collector current IC (mA) 120 100 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 80 60 40 20 0 0 2 4 6 8 0.4mA 0.3mA 0.2mA 0.1mA -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C VIN -- IO 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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